Magneto-transport properties of B-, Si- and N-doped graphene

The effect due to doping by B, Si, N atoms on the magneto-transport properties of graphene is investigated using the generalized tight-binding model in conjunction with the Kubo formula. The crucial electronic and transport properties are greatly diversified by different types of dopant and doping c...

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Bibliographic Details
Published inCarbon (New York) Vol. 160; pp. 211 - 218
Main Authors Shih, Po-Hsin, Do, Thi-Nga, Gumbs, Godfrey, Huang, Danhong, Pham, Thanh Phong, Lin, Ming-Fa
Format Journal Article
LanguageEnglish
Published New York Elsevier Ltd 30.04.2020
Elsevier BV
Subjects
Conductivity
Dopants
Doping
Energy spectra
Graphene
Integers
Magnetic properties
Mechanical properties
Quantum Hall effect
Quantum physics
Semiconductor doping
Transport properties
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Summary:The effect due to doping by B, Si, N atoms on the magneto-transport properties of graphene is investigated using the generalized tight-binding model in conjunction with the Kubo formula. The crucial electronic and transport properties are greatly diversified by different types of dopant and doping concentrations. The effect of these guest atoms includes opening a band gap, thereby giving rise to rich Landau level energy spectra and consequently a unique quantum-Hall conductivity. The Fermi-energy dependent quantum-Hall effect appears as a step structure having both integer and half-integer plateaus. Doping with Si leads to an occurrence of a zero quantum-Hall conductivity, unlike the plateau sequence for pristine graphene. The predicted dopant- and concentration-enriched quantum-Hall effect for doped graphene can provide useful information for magneto-transport measurements, possible technological and even metrology applications. [Display omitted]
ISSN:0008-6223
1873-3891
DOI:10.1016/j.carbon.2019.12.088