Fabricating High-Performance Silicon Thin-Film Transistor by Meniscus Force Mediated Layer Transfer Technique

• Published in: ECS transactions Vol. 64; no. 10; pp. 17 - 22
• Main Authors: Sakaike, Kohei, Akazawa, Muneki, Nakagawa, Akitoshi, Higashi, Seiichiro
• Format: Journal Article
• Language: English
• Published: The Electrochemical Society, Inc 05.08.2014
• ISSN: 1938-5862; 1938-6737
• DOI: 10.1149/06410.0017ecst

Single-crystalline Si (c-Si) thin-film-transistors (TFTs) were formed at a low temperature (150°C or less) on plastics by meniscus force mediated layer transfer technique. A c-Si layer supported by SiO2 columns on a starting Si-on-insulator (SOI) wafer and a counter polyethylene terephthalate (PET) substrate were placed in close face-to-face contact, and pure water was sandwiched in between the c-Si layer and the PET substrate. The samples formed in this manner were heated on a hot plate at 80°C, and the SOI layer is transferred to PET by the meniscus forces. By applying the proposed transferred technique, high performance c-Si TFT were successfully fabricated on the PET substrate, which showed a field-effect mobility as high as 343 cm2 V-1s-1.