Fabricating High-Performance Silicon Thin-Film Transistor by Meniscus Force Mediated Layer Transfer Technique
Single-crystalline Si (c-Si) thin-film-transistors (TFTs) were formed at a low temperature (150°C or less) on plastics by meniscus force mediated layer transfer technique. A c-Si layer supported by SiO2 columns on a starting Si-on-insulator (SOI) wafer and a counter polyethylene terephthalate (PET)...
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Published in | ECS transactions Vol. 64; no. 10; pp. 17 - 22 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
The Electrochemical Society, Inc
05.08.2014
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Online Access | Get full text |
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Summary: | Single-crystalline Si (c-Si) thin-film-transistors (TFTs) were formed at a low temperature (150°C or less) on plastics by meniscus force mediated layer transfer technique. A c-Si layer supported by SiO2 columns on a starting Si-on-insulator (SOI) wafer and a counter polyethylene terephthalate (PET) substrate were placed in close face-to-face contact, and pure water was sandwiched in between the c-Si layer and the PET substrate. The samples formed in this manner were heated on a hot plate at 80°C, and the SOI layer is transferred to PET by the meniscus forces. By applying the proposed transferred technique, high performance c-Si TFT were successfully fabricated on the PET substrate, which showed a field-effect mobility as high as 343 cm2 V-1s-1. |
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ISSN: | 1938-5862 1938-6737 |
DOI: | 10.1149/06410.0017ecst |