Growth of SrBi4Ti4O15 thin films in a microwave oven by the polymeric precursor method

• Published in: Journal of alloys and compounds Vol. 455; no. 1-2; pp. 407 - 412
• Main Authors: SIMOES, A. Z, RAMIREZ, M. A, RICCARDI, C. S, LONGO, E, VARELA, J. A
• Format: Journal Article
• Language: English
• Published: Lausanne Elsevier 08.05.2008
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Dielectrics, piezoelectrics, and ferroelectrics and their properties; Exact sciences and technology; Ferroelectricity and antiferroelectricity; Physics; Switching phenomena; Thin films; Atomic force microscopy; Polarization; Ferroelectricity; Coercive force; Microwave ovens; Ferroelectric switching; XRD; Fabrication property relation; Chemical synthesis; Heat treatments; Crystal structure
• ISSN: 0925-8388; 1873-4669
• DOI: 10.1016/j.jallcom.2007.01.116

SrBi4Ti4O15 (SBTi) thin films were obtained by the polymeric precursor method and crystallized in a domestic microwave oven. For comparison, films were also crystallized in a conventional furnace at 700 deg C for 2 h. Structural and morphological characterization of the SBTi thin films was investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM), respectively. Using platinum coated silicon substrates configuration, ferroelectric properties of the films were determined with remanent polarization Pr and a coercive field Ec of 5.1 muC/cm2 and 135 kV/cm for the film thermally treated in the microwave oven and 5.4 muC/cm2 and 85 kV/cm for the film thermally treated in conventional furnace, respectively. The films thermally treated in the conventional furnace exhibited excellent fatigue-free characteristics up to 1010 switching cycles indicating that SBTi thin films can be a promise material for use in non-volatile memories.