The structure and maximal gain of CW-pumped GaP-AlGaP semiconductor Raman amplifier with tapers on both sides

GaP-AlGaP waveguide semiconductor Raman amplifiers (SRAs) tapered on both sides were fabricated by high-quality GaP-AlGaP liquid phase epitaxial growth using the temperature difference method with controlled vapor pressure (TDM-CVP), photolithography patterning, and reactive ion etching with PCl/sub...

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Bibliographic Details
Published inIEEE photonics technology letters Vol. 16; no. 1; pp. 48 - 50
Main Authors Saito, S., Nishizawa, J.-I., Suto, K., Kimura, T.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.01.2004
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Amplification
Amplifiers
Epitaxial growth
Etching
Gain
Liquid waveguides
Lithography
Noise levels
Photolithography
Pressure control
Semiconductor optical amplifiers
Semiconductor waveguides
Semiconductors
Stimulated emission
Temperature control
Waveguide discontinuities
Waveguides
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Summary:GaP-AlGaP waveguide semiconductor Raman amplifiers (SRAs) tapered on both sides were fabricated by high-quality GaP-AlGaP liquid phase epitaxial growth using the temperature difference method with controlled vapor pressure (TDM-CVP), photolithography patterning, and reactive ion etching with PCl/sub 3/ gas. Although the finesse of the both-sides-tapered waveguide SRA is lower than previous values for straight or one-side-tapered waveguides, the CW-pumped gain was maximized, and a maximal gain of 4.2 dB was obtained. This letter presents the effect of tapered structures in SRA with CW pumping amplification.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2003.820114