Correlation of Fusion and Fission Neutron Damage in Transistors

• Published in: Journal of nuclear science and technology Vol. 26; no. 2; pp. 231 - 239
• Main Authors: IIDA, Toshiyuki, SUMITA, Kenji
• Format: Journal Article
• Language: English
• Published: Tokyo Taylor & Francis Group 01.02.1989; Taylor & Francis Ltd
• Subjects: correlation factor; current gain; damage calculation; damage constant; displacemet damage; fission neutrons; fusion neutrons; fusion-fission radiation damage; in-situ measurement; irradiation; neutron beams; silicon; silicon semiconductor device; transistors
• ISSN: 0022-3131; 1881-1248
• DOI: 10.1080/18811248.1989.9734297

In order to examine the correlation of fusion and fission neutron damage in silicon semiconductor devices, silicon bipolar transistors were irradiated with fusion neutrons from a D-T neutron source OKTAVIAN and fission neutrons from a 252 Cf neutron source. The degradation of common emitter current gain (h FE ) of the transistors was measured in-situ during neutron irradiation. The change in reciprocal current gain increased proportionally with neutron fluence, which determined neutron damage constants for the transistors. The correlation factor of fusion and fission neutron damage in the transistors was determined from the ratio of fusion and fission neutron damage constants and was found to be 1.6-1.7. We also calculated the rate of fusion and fission neutron displacement damage for silicon by using the damage energy formula based on the Lindhard theory and the ENDF/B-IV neutron cross section data. The correlation factor of fusion and fission neutron damage from the calculation agreed well with that from the transistor irradiation experiments.