Role of humidity in oxidation of ultrathin GaSe

The oxidation mechanisms of exfoliated Gallium Selenide (GaSe) are strongly influenced by humidity. We have observed that the presence of water molecules leads to formation of Ga2O3, SeO2, and Se via sequence of intermediate reactions which include generation of aqueous solution of selenic acid. Ram...

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Published inMaterials research express Vol. 6; no. 8; pp. 85907 - 85911
Main Authors Kowalski, Brian M, Manz, Noah, Bethke, Donald, Shaner, Eric A, Serov, Alexey, Kalugin, Nikolai G
Format Journal Article
LanguageEnglish
Published United States IOP Publishing 10.05.2019
Subjects
2D materials
gallium selenide
MATERIALS SCIENCE
oxidation
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Summary:The oxidation mechanisms of exfoliated Gallium Selenide (GaSe) are strongly influenced by humidity. We have observed that the presence of water molecules leads to formation of Ga2O3, SeO2, and Se via sequence of intermediate reactions which include generation of aqueous solution of selenic acid. Raman spectra of GaSe flakes undergoing oxidation in a humidity-controlled environment reveal formation of selenic acid-related species causing Raman scattering signal in the regions around 830 cm−1 and around 1230 cm−1. This observation sheds light on the path of chemical reactions, going via an intermediate stage of formation of gallium hydroxide and selenium oxide-water complexes with further decompositions of these compounds to Ga2O3, SeO2, and amorphous selenium.
Bibliography:MRX-113584.R1
AC04-94AL85000; NA0003525
SAND-2019-11745J
USDOE Office of Science (SC), Basic Energy Sciences (BES)
USDOE National Nuclear Security Administration (NNSA)
ISSN:2053-1591
2053-1591
DOI:10.1088/2053-1591/ab1dd2