A Practical Design of X-Band Receiver Front-End in 65-nm CMOS

• Published in: Chinese Journal of Electronics Vol. 25; no. 3; pp. 413 - 417
• Main Authors: Lu, Zhijian, Guan, Rui, Li, Xiaoyong, Zhou, Jianjun
• Format: Journal Article
• Language: English
• Published: Published by the IET on behalf of the CIE 01.05.2016
• Subjects: Area‐efficient; CMOS integrated circuits; CMOS技术; double balanced down‐converter; electrostatic discharge protection circuits; ESD; IF buffers; interfrequency buffers; LDO; LNA; Low cost CMOS; low dropout regulators; low‐cost low‐power area‐efficient receiver front‐end prototype; low‐power electronics; noise figure 7.5 dB; Receiver front‐end; single‐ended input differential‐output low noise amplifier; single‐sideband noise figure; size 65 nm; SSB; voltage 3.3 V; X‐band; X‐band applications; X波段; 低压差稳压器; 低噪声放大器; 前端设计; 单端输入; 接收机前端; 输出缓冲器; size 65 nm; SSB; single-sideband noise figure; voltage 3.3 V; low-cost low-power area-efficient receiver front-end prototype; Low cost CMOS; X-band applications; IF buffers; Area-efficient; single-ended input differential-output low noise amplifier; LDO; ESD; X-band; interfrequency buffers; noise figure 7.5 dB; CMOS integrated circuits; electrostatic discharge protection circuits; Receiver front-end; double balanced down-converter; low dropout regulators; low-power electronics; LNA
• ISSN: 1022-4653; 2075-5597
• DOI: 10.1049/cje.2016.05.004

A low-cost low-power area-efficient receiver front-end prototype for X-band applications is presented.The front-end primarily consists of 3 blocks： a singleended input differential-output Low noise amplifier（LNA）,a double balanced down-converter, and Inter-frequency（IF） buffers providing single-ended output. Including are also Low dropout regulators（LDO） and Electrostatic discharge（ESD） protection circuits coinciding with the forgoing blocks. Local oscillator（LO） frequency is chosen such that output signal locates in L/S-band for extending subsequent applications. Experimentally exhibiting a conversion gain of around 44 dB with 7.5-dB Single-sideband（SSB）Noise figure（NF）, the front-end totally draws 24 m A from an external 3.3-V supply. Fabricated in a 65-nm CMOS technology, this compact receiver occupies an area of only0.22mm~2.