Overshoot of quantum Hall plateaus

• Published in: Surface science Vol. 263; no. 1; pp. 270 - 274
• Main Authors: Richter, C.A., Wheeler, R.G., Sacks, R.N.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Lausanne Elsevier B.V 19.02.1992; Amsterdam Elsevier Science; New York, NY
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport in interface structures; Exact sciences and technology; Physics
• ISSN: 0039-6028; 1879-2758
• DOI: 10.1016/0039-6028(92)90350-F

In magnetoresistance studies of high mobility GaAs/AlGaAs Hall bars in the quantum Hall regime we observe that the Hall resistance ( R H) overshoots the normally observed spin plateaus; however, as the magnetic field is further increased, R H, decreases until a plateau is formed at ( 1 N odd ) h e 2 . The resultant peaks in R H occur only on the low magnetic field e plateaus and show both a strong temperature and sample geometry dependence. These anomalies are due to a decoupling with magnetic field of the two edge states associated with the topmost spin split Landau level. This decoupling occurs rapidly because of the enhancement of the spin splitting due to electron-electron interactions.