Preparation of Ga2Se3 thin films by sol–gel technique
In this study we describe the preparation of Ga 2 Se 3 semiconductor compound thin films by sol–gel method for different crystal formation temperatures. The films were characterized by X-ray diffraction analyses (XRD), UV–visible spectrometer, and scanning electron microscope (SEM). The XRD spectrum...
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Published in | Journal of sol-gel science and technology Vol. 50; no. 3; pp. 271 - 274 |
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Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
Boston
Springer US
01.06.2009
Springer Springer Nature B.V |
Subjects | |
Online Access | Get full text |
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Summary: | In this study we describe the preparation of Ga
2
Se
3
semiconductor compound thin films by sol–gel method for different crystal formation temperatures. The films were characterized by X-ray diffraction analyses (XRD), UV–visible spectrometer, and scanning electron microscope (SEM). The XRD spectrum showed that the formation of Ga
2
Se
3
crystals were between 743 and 823 K. The thin film crystals that were formed at 773 K corresponded to the β phase and the preferred crystal structure was monoclinic. The value of band gap from optical absorption spectra for the Ga
2
Se
3
thin films was estimated to be about
E
g
~ 2.56 eV. The thickness of the one-coat Ga
2
Se
3
thin films, which was measured by a Spectroscopic Ellipsometer, was about ~200 nm. The average grain sizes of scattered particles were within the limits between 200 and 500 nm. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0928-0707 1573-4846 |
DOI: | 10.1007/s10971-009-1973-7 |