Ultrafast growth of InGaP solar cells via hydride vapor phase epitaxy

Hydride vapor phase epitaxy (HVPE) is a promising technique for fabricating low-cost III-V solar cells. This letter highlights the fast growth of InGaP single-junction solar cells via HVPE. High-quality InGaP layers without decomposition are obtained at a growth temperature of 660 °C. InGaP growth r...

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Bibliographic Details
Published inApplied physics express Vol. 12; no. 5; pp. 52004 - 52008
Main Authors Shoji, Yasushi, Oshima, Ryuji, Makita, Kikuo, Ubukata, Akinori, Sugaya, Takeyoshi
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.05.2019
Subjects
hydride vapor phase epitaxy
III-V semiconductors
solar cells
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Summary:Hydride vapor phase epitaxy (HVPE) is a promising technique for fabricating low-cost III-V solar cells. This letter highlights the fast growth of InGaP single-junction solar cells via HVPE. High-quality InGaP layers without decomposition are obtained at a growth temperature of 660 °C. InGaP growth rate increases with increasing gaseous hydrogen chloride (HCl) flow rate to group III metals. Herein, the highest rate of 54 m h−1 is achieved on InGaP growth. Furthermore, InGaP single-junction solar cells grown with high growth rate exhibit good performance under an air mass 1.5 global solar spectrum.
Bibliography:APEX-101409.R1
ISSN:1882-0778
1882-0786
DOI:10.7567/1882-0786/ab0aa5