Recovery-aware bias-stress degradation model for organic thin-film transistors considering drain and gate bias voltages

• Published in: Japanese Journal of Applied Physics Vol. 59; no. SG; p. SGGG08
• Main Authors: Oshima, Kunihiro, Shintani, Michihiro, Kuribara, Kazunori, Ogasahara, Yasuhiro, Sato, Takashi
• Format: Journal Article
• Language: English
• Published: Tokyo Japanese Journal of Applied Physics 01.04.2020
• Subjects: Bias; Circuit design; Degradation; Electric potential; Mathematical models; Parameters; Recovery; Semiconductor devices; Thin film transistors; Transistors; Voltage
• DOI: 10.7567/1347-4065/ab6460
• ISSN: 0021-4922

Due to the limited lifetime of organic thin-film transistors (OTFTs), it is crucial to predict the degradation of circuit performance at the early stage of design. In this paper, we discuss bias stress voltage degradation of OTFTs. Through the measurements, we show that the gate voltage affects more significantly in the short term device degradation than drain current flow and that the degradation recovers partially when the given bias voltage is removed. We also propose a novel bias stress voltage degradation model that can express the model-parameter degradation and its recovery. The proposed model can fit the temporal shift of the measured model parameters very well.