Recovery-aware bias-stress degradation model for organic thin-film transistors considering drain and gate bias voltages

Due to the limited lifetime of organic thin-film transistors (OTFTs), it is crucial to predict the degradation of circuit performance at the early stage of design. In this paper, we discuss bias stress voltage degradation of OTFTs. Through the measurements, we show that the gate voltage affects more...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 59; no. SG; p. SGGG08
Main Authors Oshima, Kunihiro, Shintani, Michihiro, Kuribara, Kazunori, Ogasahara, Yasuhiro, Sato, Takashi
Format Journal Article
LanguageEnglish
Published Tokyo Japanese Journal of Applied Physics 01.04.2020
Subjects
Bias
Circuit design
Degradation
Electric potential
Mathematical models
Parameters
Recovery
Semiconductor devices
Thin film transistors
Transistors
Voltage
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Summary:Due to the limited lifetime of organic thin-film transistors (OTFTs), it is crucial to predict the degradation of circuit performance at the early stage of design. In this paper, we discuss bias stress voltage degradation of OTFTs. Through the measurements, we show that the gate voltage affects more significantly in the short term device degradation than drain current flow and that the degradation recovers partially when the given bias voltage is removed. We also propose a novel bias stress voltage degradation model that can express the model-parameter degradation and its recovery. The proposed model can fit the temporal shift of the measured model parameters very well.
ISSN:0021-4922
1347-4065
DOI:10.7567/1347-4065/ab6460