The growth of InGaAsP by CBE for SCH quantum well lasers operating at 1.55 and 1.4 μm

• Published in: Journal of crystal growth Vol. 120; no. 1; pp. 162 - 166
• Main Authors: Sherwin, M.E., Munns, G.O., Nichols, D.T., Bhattacharya, P.K., Terry, F.L.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.05.1992; Elsevier
• Subjects: Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties; Physics; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/0022-0248(92)90383-T

InGaAsP has been grown by CBE at compositions of 1.1, 1.2 and 1.4 μm for the development of MQW-SCH lasers. The observed incorporation coefficients for TMI and TEG show strong temperature sensitivity while the phosphorus and arsenic incorporation behavior is constant over the substrate temperature range explored, 530 to 580°C setpoint. For higher substrate temperatures the growth rate increases with the largest growth rates occurring for the 1.4 μm quaternary. Low temperature photoluminescence indicates the possibility of compositional grading or clustering for the 1.1 μm material and also for the 1.2 μm material grown at the lowest substrate temperature. The final laser structure was grown with the InP cladding regions grown at 580°C with the inner cladding and active regions grown at 555°C. Using this approach we have successfully grown MQW-SCH lasers with the composition of the active In x Ga 1− x As ranging from x=0.33 to x=0.73. Threshold current densities as low as 689 A/cm 2 have been measured for an 800 μm×90 μm broad area device with x=0.68.