Ligand stabilised dialkyl aluminium amides as new precursors for aluminium nitride thin films

Ligand stabilised aluminium amides of the type Me2Al[NR'(CH2)2NR2], where R = Me and R' = Et (1), were synthesised using HNEt(CH2)2NMe2 (1a) via an alkane elimination reaction, with an equimolar mixture of Lewis acid (trimethylaluminium) and Lewis base (substituted ethylenediamine 1a), in...

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Bibliographic Details
Published inJournal of materials chemistry Vol. 14; no. 21; pp. 3210 - 3214
Main Authors Khanderi, Jayaprakash, Rische, Daniel, Becker, Hans W., Fischer, Roland A.
Format Journal Article
LanguageEnglish
Published Cambridge Royal Society of Chemistry 01.01.2004
Subjects
Cross-disciplinary physics: materials science; rheology
Exact sciences and technology
Materials science
Physics
Solvents
Temperature
Vapor pressure
Thermogravimetry
Lewis acids
Alkanes
Amides
MOCVD
Precursor
High pressure
Thin films
Ammonia
Synthesis
Aluminium nitrides
Ligands
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Summary:Ligand stabilised aluminium amides of the type Me2Al[NR'(CH2)2NR2], where R = Me and R' = Et (1), were synthesised using HNEt(CH2)2NMe2 (1a) via an alkane elimination reaction, with an equimolar mixture of Lewis acid (trimethylaluminium) and Lewis base (substituted ethylenediamine 1a), in the absence of solvent. The product is a colourless liquid having relatively high vapour pressure as indicated by TGA. Metallorganic chemical vapour deposition (MOCVD) of the precursor in the presence of NH3 in the temperature range of 500-950 C resulted in crystalline AlN films. The self decomposition (without NH3) of the precursor under MOCVD conditions resulted in aluminium (carbo) nitride films having the composition Al:N:C 1:0.7:0.6 (plus or minus 0.1) above 600 C using N2 and H2 as carrier gas. 22 refs.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0959-9428
1364-5501
DOI:10.1039/b405773b