Fully 3D self-consistent quantum transport simulation of Double-gate and Tri-gate 10 nm FinFETs

• Published in: Journal of computational electronics Vol. 7; no. 3; pp. 346 - 349
• Main Authors: Khan, H., Mamaluy, D., Vasileska, D.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Boston Springer US 01.09.2008; Kluwer Academic Publishers; Springer Nature B.V
• Subjects: Applied sciences; Bias; Computer simulation; Current leakage; Devices; Dopants; Drains; Electrical Engineering; Electronics; Engineering; Exact sciences and technology; Gates; Leakage current; Mathematical and Computational Engineering; Mathematical and Computational Physics; Mechanical Engineering; Optical and Electronic Materials; Quantum mechanics; Quantum transport; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Simulation; Theoretical; Three dimensional; Transistors; FinFETs; CBR; Unintentional dopant; Tri-gate FinFET; Gate current; Performance evaluation; MOSFET; Reduction method; Self consistency; Dual gate transistor; Leakage current; FinFETS· Unintentional dopant· Tri-gate FinFET; Simulator; Quantum transport; Self aligned technology
• ISSN: 1569-8025; 1572-8137
• DOI: 10.1007/s10825-008-0224-4

We utilize a fully self-consistent 3D quantum mechanical simulator based on the Contact Block Reduction (CBR) method to investigate the effects of fin height and unintentional dopant on the device characteristics of a 10-nm FinFET device. The per-fin height off-current is found to be relatively insensitive to fin height while the corresponding per fin height on-current may significantly depend on fin height due to the stronger confinement with decreasing fin height. Also gate leakage is found to show similar behavior as device on-current with decreasing fin height. Tri-gate (TG) FinFET is found to show better performance compared to Double-gate (DG) FinFET, with the exception of gate leakage current. Simulation results show that an unintentional dopant within the channel can significantly alter device characteristics depending on its position and applied biases. In addition, the effects of unintentional dopant are found to be stronger at high drain bias than at low drain bias.