Analysis of Horizontal-Vertical Patterning Asymmetry in a Linearly Polarized Deep UV Exposure System

The asymmetric property of horizontal and vertical lines and spaces is investigated using the commercial deep UV scanner which utilizes a polarized illumination source. An approximate aerial image threshold model is used to introduce the quantitative contrast value of the measured horizontal and ver...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 37; no. 1R; p. 364
Main Authors Lim, Chang-Moon, Hyeong-Soo Kim, Hyeong-Soo Kim, Ki-Ho Baik, Ki-Ho Baik
Format Journal Article
LanguageEnglish
Published 01.01.1998
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Summary:The asymmetric property of horizontal and vertical lines and spaces is investigated using the commercial deep UV scanner which utilizes a polarized illumination source. An approximate aerial image threshold model is used to introduce the quantitative contrast value of the measured horizontal and vertical pattern sizes. The line and space patterns along the horizontal axis, perpendicular to the polarization direction on the mask plane, always shows a higher contrast than that of the vertical axis. The contrast difference becomes greater as the pattern size becomes smaller. In addition, it is observed that the optimum exposure energy of the vertical line and space pattern is smaller than that of the horizontal ones. Finally, the patterning characteristics of the gate lines of the real devices with a 0.20 µ m design rule is investigated according to the orientation of the patterns.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.37.364