An induced base hot-electron transistor
A novel three-terminal device is proposed in which the base represents an undoped quantum well in a graded-gap heterostructure. The base conductivity is provided by a two-dimensional electron gas induced by the collector field. The intrinsic delay time is estimated to be about 1 ps at room temperatu...
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Published in | IEEE electron device letters Vol. 6; no. 4; pp. 178 - 180 |
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Main Author | |
Format | Journal Article |
Language | English |
Published |
New York, NY
IEEE
01.04.1985
Institute of Electrical and Electronics Engineers |
Subjects | |
Online Access | Get full text |
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Summary: | A novel three-terminal device is proposed in which the base represents an undoped quantum well in a graded-gap heterostructure. The base conductivity is provided by a two-dimensional electron gas induced by the collector field. The intrinsic delay time is estimated to be about 1 ps at room temperature with a common-base current gain close to unity. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0741-3106 1558-0563 |
DOI: | 10.1109/EDL.1985.26088 |