An induced base hot-electron transistor

A novel three-terminal device is proposed in which the base represents an undoped quantum well in a graded-gap heterostructure. The base conductivity is provided by a two-dimensional electron gas induced by the collector field. The intrinsic delay time is estimated to be about 1 ps at room temperatu...

Full description

Saved in:
Bibliographic Details
Published inIEEE electron device letters Vol. 6; no. 4; pp. 178 - 180
Main Author Luryi, S.
Format Journal Article
LanguageEnglish
Published New York, NY IEEE 01.04.1985
Institute of Electrical and Electronics Engineers
Subjects
Applied sciences
Current density
Delay effects
Delay estimation
Electron emission
Electronics
Electrooptic effects
Exact sciences and technology
FETs
Gallium arsenide
Reflection
Scattering
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Transistor
Online AccessGet full text

Cover

More Information
Summary:A novel three-terminal device is proposed in which the base represents an undoped quantum well in a graded-gap heterostructure. The base conductivity is provided by a two-dimensional electron gas induced by the collector field. The intrinsic delay time is estimated to be about 1 ps at room temperature with a common-base current gain close to unity.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0741-3106
1558-0563
DOI:10.1109/EDL.1985.26088