Flexible FETs using ultrathin Si microwires embedded in solution processed dielectric and metal layers

• Published in: Journal of micromechanics and microengineering Vol. 25; no. 12; pp. 125019 - 125028
• Main Authors: Khan, S, Yogeswaran, N, Taube, W, Lorenzelli, L, Dahiya, R
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.12.2015
• Subjects: field effect transistors; flexible electronics; PDMS; Si microwires; transfer printing; wires
• ISSN: 0960-1317; 1361-6439
• DOI: 10.1088/0960-1317/25/12/125019

This work presents a novel manufacturing route for obtaining high performance bendable field effect transistors (FET) by embedding silicon (Si) microwires (2.5 μm thick) in layers of solution-processed dielectric and metallic layers. The objective of this study is to explore heterogeneous integration of Si with polymers and to exploit the benefits of both microelectronics and printing technologies. Arrays of Si microwires are developed on silicon on insulator (SOI) wafers and transfer printed to polyimide (PI) substrate through a polydimethylsiloxane (PDMS) carrier stamp. Following the transfer printing of Si microwires, two different processing steps were developed to obtain top gate top contact and back gate top contact FETs. Electrical characterizations indicate devices having mobility as high as 117.5 cm2 V−1 s−1. The fabricated devices were also modeled using SILVACO Atlas. Simulation results show a trend in the electrical response similar to that of experimental results. In addition, a cyclic test was performed to demonstrate the reliability and mechanical robustness of the Si μ-wires on flexible substrates.