Recombination activity of sub-grain boundaries and dislocation arrays in quasi-single crystalline silicon

• Published in: Applied physics express Vol. 12; no. 5; pp. 51012 - 51016
• Main Authors: Mao, Xuan, Yu, Xuegong, Yuan, Shuai, Yang, Deren
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.05.2019
• Subjects: dislocation array; EBIC; quasi-single crystalline silicon; recombination activity; sub-grain boundary

Crystallographic defects in quasi-single crystalline (QSC) silicon are seriously detrimental to the performances of solar cells. In this work, we have identified these crystallographic defects as sub-grain boundaries (sub-GBs) and dislocation arrays (DAs). Sub-GBs with misorientation of >0.7° alw...