Recombination activity of sub-grain boundaries and dislocation arrays in quasi-single crystalline silicon

Crystallographic defects in quasi-single crystalline (QSC) silicon are seriously detrimental to the performances of solar cells. In this work, we have identified these crystallographic defects as sub-grain boundaries (sub-GBs) and dislocation arrays (DAs). Sub-GBs with misorientation of >0.7° alw...

Full description

Saved in:
Bibliographic Details
Published inApplied physics express Vol. 12; no. 5; pp. 51012 - 51016
Main Authors Mao, Xuan, Yu, Xuegong, Yuan, Shuai, Yang, Deren
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.05.2019
Subjects
dislocation array
EBIC
quasi-single crystalline silicon
recombination activity
sub-grain boundary
Online AccessGet full text

Cover

More Information
Summary:Crystallographic defects in quasi-single crystalline (QSC) silicon are seriously detrimental to the performances of solar cells. In this work, we have identified these crystallographic defects as sub-grain boundaries (sub-GBs) and dislocation arrays (DAs). Sub-GBs with misorientation of >0.7° always show strong recombination activity, which are the main cause for the efficiency degradation of solar cells. Moreover, the recombination activity of sub-GBs with misorientation of <0.7° and DAs is strongly dependent on dislocation density and metal contamination level. Phosphorus gettering is an effective way to reduce the effect of metal contamination at the sub-GBs and DAs in QSC silicon.
Bibliography:APEX-101495.R1
ISSN:1882-0778
1882-0786
DOI:10.7567/1882-0786/ab14be