The Spectral Response of the Dual Microdisk Resonator Based on BaTiO3 Resistive Random Access Memory

• Published in: Micromachines (Basel) Vol. 13; no. 8; p. 1175
• Main Authors: Chuang, Ricky Wenkuei, Liu, Bo-Liang, Huang, Cheng-Liang
• Format: Journal Article
• Language: English
• Published: Basel MDPI AG 26.07.2022; MDPI
• Subjects: Barium titanates; Electric potential; Integrated circuits; Lithium; lithium niobite (LiNbO3); Memory devices; parallel double disk-coupled resonator; Power consumption; Random access memory; resistive random access memory (ReRAM); Resonators; Semiconductors; Silicon; Spectral sensitivity; Thickness; Voltage; Waveguides
• ISSN: 2072-666X; 2072-666X
• DOI: 10.3390/mi13081175

With the resistive random access memory (ReRAM) devices based on the Al/BaTiO3 (BTO)/ITO structure fabricated at hand, by cross-analyzing the resistive memory characteristics in terms of various barium titanate (BTO) film thicknesses, it is found that the device with 60 nm thick BTO can be switched more than 425 times, while the corresponding SET/RESET voltage, the on-off ratio, and the retention time are −0.69 V/0.475 V, 102, and more than 104 seconds, respectively. Furthermore, the aforementioned ReRAM with a low switching voltage and low power consumption is further integrated with a waveguide resonator in the form of a dual microdisk aligned in a parallel fashion. As the separation gap between the two microdisks is fixed at 15 μm, the ReRAM-mediated dual disk resonator would render a 180° phase reversal between the spectral outputs of the through-port and drop-port. If the gap is shortened to 10 and 5 μm, the expected phase reversal could also be retrieved due to the selective combinations of different memory states associated with each of the two ReRAM microdisks as witnessed by a series of characterization measurements.