A General Atmospheric Pressure Chemical Vapor Deposition Synthesis and Crystallographic Study of Transition-Metal Sulfide One-Dimensional Nanostructures

A series of transition‐metal sulfide one‐dimensional (1D) nanostructures have been synthesized by means of a general atmospheric pressure, chemical vapor deposition (APCVD) strategy. Vapour–liquid–solid (VLS) and vapour–solid (VS) mechanisms, along with the results of SEM and TEM observations, were...

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Published inChemistry : a European journal Vol. 10; no. 14; pp. 3525 - 3530
Main Authors Ge, Jian-Ping, Wang, Jin, Zhang, Hao-Xu, Li, Ya-Dong
Format Journal Article
LanguageEnglish
Published Weinheim WILEY-VCH Verlag 19.07.2004
WILEY‐VCH Verlag
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Summary:A series of transition‐metal sulfide one‐dimensional (1D) nanostructures have been synthesized by means of a general atmospheric pressure, chemical vapor deposition (APCVD) strategy. Vapour–liquid–solid (VLS) and vapour–solid (VS) mechanisms, along with the results of SEM and TEM observations, were used to explain the formation of these nanostructures. The regularity of the growth in the direction of the hexagonal nanowire is explored; we find that it prefers to grow along (1 0 0), (1 1 0), or (0 0 x) directions owing to particular crystal structures. The adopted synthetic route was expected to provide abundant useful 1D building blocks for the research of mesoscopic physics and fabrication of nanoscale devices. Crystal preferences: A series of transition‐metal sulfide 1D nanostructures have been synthesized by means of a general atmospheric pressure chemical vapor deposition (APCVD) strategy. Vapour–liquid–solid (VLS) and vapour–solid (VS) mechanisms, along with the results of SEM and TEM observations, were used to explain the formation of these 1D nanostructures. The regularity about the growth direction of hexagonal nanowires (illustrated here) is explored.
Bibliography:istex:8A94F3C65E16C5E3B15EE8D354FFADEDDBF9267E
ArticleID:CHEM200400008
ark:/67375/WNG-7M13WJWN-V
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SourceType-Scholarly Journals-1
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content type line 23
ISSN:0947-6539
1521-3765
DOI:10.1002/chem.200400008