Temperature dependence of the P-hit single event transient pulse width in a three-transistor inverter chain

• Published in: Chinese physics B Vol. 21; no. 1; pp. 340 - 345
• Main Author: 陈书明 陈建军
• Format: Journal Article
• Language: English
• Published: 2012
• Subjects: Chains; Collection; Compressed; Extreme environments; Inverters; Mathematical models; Single Event Effects; Temperature dependence; Three dimensional; 三维数值模拟; 事件集合; 晶体管逆变器; 温度依赖性; 瞬态; 脉冲宽度; 链; 集成电路设计
• DOI: 10.1088/1674-1056/21/1/016104
• ISSN: 1674-1056

A comparison of the temperature dependence of the P-hit single event transient （SET） in a two-transistor （2T） inverter with that in a three-transistor （3T） inverter is carried out based on a three-dimensional numerical simulation. Due to the significantly distinct mechanisms of the single event change collection in the 2T and the 3T inverters, the temperature plays different roles in the SET production and propagation. The SET pulse will be significantly broadened in the 2T inverter chain while will be compressed in the 3T inverter chain as temperature increases. The investigation provides a new insight into the SET mitigation under the extreme environment, where both the high temperature and the single event effects should be considered. The 3T inverter layout structure （or similar layout structures） will be a better solution for spaceborne integrated circuit design for extreme environments.