Temperature dependence of the P-hit single event transient pulse width in a three-transistor inverter chain

A comparison of the temperature dependence of the P-hit single event transient （SET） in a two-transistor （2T） inverter with that in a three-transistor （3T） inverter is carried out based on a three-dimensional numerical simulation. Due to the significantly distinct mechanisms of the single event chan...

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Bibliographic Details
Published inChinese physics B Vol. 21; no. 1; pp. 340 - 345
Main Author 陈书明 陈建军
Format Journal Article
LanguageEnglish
Published 2012
Subjects
Chains
Collection
Compressed
Extreme environments
Inverters
Mathematical models
Single Event Effects
Temperature dependence
Three dimensional
三维数值模拟
事件集合
晶体管逆变器
温度依赖性
瞬态
脉冲宽度
链
集成电路设计
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Summary:A comparison of the temperature dependence of the P-hit single event transient （SET） in a two-transistor （2T） inverter with that in a three-transistor （3T） inverter is carried out based on a three-dimensional numerical simulation. Due to the significantly distinct mechanisms of the single event change collection in the 2T and the 3T inverters, the temperature plays different roles in the SET production and propagation. The SET pulse will be significantly broadened in the 2T inverter chain while will be compressed in the 3T inverter chain as temperature increases. The investigation provides a new insight into the SET mitigation under the extreme environment, where both the high temperature and the single event effects should be considered. The 3T inverter layout structure （or similar layout structures） will be a better solution for spaceborne integrated circuit design for extreme environments.
Bibliography:A comparison of the temperature dependence of the P-hit single event transient （SET） in a two-transistor （2T） inverter with that in a three-transistor （3T） inverter is carried out based on a three-dimensional numerical simulation. Due to the significantly distinct mechanisms of the single event change collection in the 2T and the 3T inverters, the temperature plays different roles in the SET production and propagation. The SET pulse will be significantly broadened in the 2T inverter chain while will be compressed in the 3T inverter chain as temperature increases. The investigation provides a new insight into the SET mitigation under the extreme environment, where both the high temperature and the single event effects should be considered. The 3T inverter layout structure （or similar layout structures） will be a better solution for spaceborne integrated circuit design for extreme environments.
temperature dependence, single event transient, parasitic bipolar amplification effect,charge sharing collection
11-5639/O4
Chen Shu-Ming and Chen Jian-Jun（ School of Computer Science, National University of Defense Technology, Changsha 410073, China）
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/21/1/016104