Enhancement of the efficiency of ultra-thin CIGS/Si structure for solar cell applications

• Published in: Superlattices and microstructures Vol. 138; p. 106377
• Main Authors: Boubakeur, M., Aissat, A., Ben Arbia, M., Maaref, H., Vilcot, J.P.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.02.2020; Elsevier
• Series: Superlattices and Microstructures
• Subjects: Conversion efficiency; Engineering Sciences; Materials; Solar cell; Thickness; Ultra-thin CIGS; Ultra-thin CIGS; Thickness; Solar cell; Conversion efficiency; Materials
• ISSN: 0749-6036; 1096-3677
• DOI: 10.1016/j.spmi.2019.106377

This paper describes a numerical study of ultrathin CIGS solar cell using the one-dimensional simulation program. The various properties of the absorber layer such as the band gap energy, the absorption coefficient, and the reflection coefficient are investigated. In addition, the impact of adding silicon to reduce the thickness of CIGS is also examined. We have carried out a theoretical study to show the influence of the thickness and the gallium concentration of the CIGS absorber layer on the performance of the Mo/Si/CIGS/ZnS/ZnO structure. It has been demonstrated that increasing xGa and dCIGS affect the conversion efficiency, FF, Voc, and Jsc. Finally, we have achieved a conversion efficiency η = 21.08% with an optimal value of gallium content equal to 20%when the thickness of the absorber layer has been reduced to 0.75 μm. This study allowed us to improve the performance of thin film solar cell. •The impact of material properties on solar cell performance.•The effect of Ga content and CIGS thickness on the conversion efficiency.•Ultrathin CIGS solar cell performance when adding a silicon layer.•The influence of defects and Rs on the different electrical parameters.