About the defect structure in differently doped PZT ceramics: A temperature dependent positron lifetime study

Pure and doped PZT ceramics (PZT:La+Fe, PZT:La, PZT:Gd, PIC 151 and with 0.1, 0.25, 0.5, 1.0mol% Fe doped samples) have been examined by Positron Annihilation Lifetime Spectroscopy (PALS) in the range of temperatures between 150 and 375K. It was found that the defect-related lifetime increased with...

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Bibliographic Details
Published inCeramics international Vol. 40; no. 7; pp. 9127 - 9131
Main Authors Drogowska, K., Elsayed, M., Krause-Rehberg, R., Balogh, A.G.
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.08.2014
Subjects
A. Implantation
Agglomeration
B. Defects
Ceramics
D. Perovskites
D. PZT
Defects
Iron
Lead zirconate titanates
Positron annihilation
Positrons
Vacancies
B. Defects
A. Implantation
D. PZT
D. Perovskites
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Summary:Pure and doped PZT ceramics (PZT:La+Fe, PZT:La, PZT:Gd, PIC 151 and with 0.1, 0.25, 0.5, 1.0mol% Fe doped samples) have been examined by Positron Annihilation Lifetime Spectroscopy (PALS) in the range of temperatures between 150 and 375K. It was found that the defect-related lifetime increased with increasing temperature, indicating vacancy-like defects. With increasing Fe doping, a loss of vacancy agglomerations was observed, as well as a weaker dependence of lifetime on temperature.
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ISSN:0272-8842
1873-3956
DOI:10.1016/j.ceramint.2014.01.127