Investigation of the Chemical Reaction between Silver Electrodes and Transparent Conductive Oxide Films for the Improvement of Fill Factor of Silicon Heterojunction Solar Cells

• Published in: ECS journal of solid state science and technology Vol. 10; no. 5; pp. 55013 - 55018
• Main Authors: Nishihara, Tappei, Muramatsu, Kazuo, Nakamura, Kyotaro, Ohshita, Yoshio, Yasuno, Satoshi, Kanai, Hiroki, Hara, Yutaka, Hibino, Yusuke, Kojima, Haruki, Ogura, Atsushi
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.05.2021
• ISSN: 2162-8769; 2162-8777
• DOI: 10.1149/2162-8777/abffae

We evaluated the fill factor (FF) degradation mechanism in silicon heterojunction (SHJ) solar cells with high mobility In 2 O 3 film as a high carrier mobility transparent conductive oxide (TCO) film. In particular, we focused on the electrode formation using a high productive screen-printing technique. We found the In 2 O 3 film is easier to be reduced than the traditional TCO such as tin-doped indium oxide (ITO). Thus, the Ag atom inside the electrode is easily oxidized during the cure annealing process and results in higher contact resistance at electrode/TCO interface and deteriorate FF characteristic. We introduced novel cation catalyst additive for paste polymerization which is less reactive with In 2 O 3 and improve the contact resistance by suppressing the silver oxidation. We also demonstrated SHJ cell fabrication and prove the effect of the developed silver paste.