A graphene/single GaAs nanowire Schottky junction photovoltaic device

• Published in: Nanoscale Vol. 1; no. 19; pp. 9212 - 9217
• Main Authors: Luo, Yanbin, Yan, Xin, Zhang, Jinnan, Li, Bang, Wu, Yao, Lu, Qichao, Jin, Chenxiaoshuai, Zhang, Xia, Ren, Xiaomin
• Format: Journal Article
• Language: English
• Published: England Royal Society of Chemistry 17.05.2018
• Subjects: Graphene; Low cost; Nanowires; Open circuit voltage; Optoelectronic devices; Photovoltaic cells; Short circuits; Solar cells
• ISSN: 2040-3364; 2040-3372
• DOI: 10.1039/c8nr00158h

A graphene/nanowire Schottky junction is a promising structure for low-cost high-performance optoelectronic devices. Here we demonstrate a graphene/single GaAs nanowire Schottky junction photovoltaic device. The Schottky junction is fabricated by covering a single layer graphene onto an n-doped GaAs nanowire. Under 532 nm laser excitation, the device exhibits a high responsivity of 231 mA W −1 and a short response/recover time of 85/118 μs at zero bias. Under AM 1.5 G solar illumination, the device has an open-circuit voltage of 75.0 mV and a short-circuit current density of 425 mA cm −2 , yielding a remarkable conversion efficiency of 8.8%. The excellent photovoltaic performance of the device is attributed to the strong built-in electric field in the Schottky junction as well as the transparent property of graphene. The device is promising for self-powered high-speed photodetectors and low-cost high-efficiency solar cells. A graphene/nanowire Schottky junction is a promising structure for low-cost high-performance optoelectronic devices.