Facile and stable fabrication of wafer-scale, ultra-black c -silicon with 3D nano/micro hybrid structures for solar cells
Three-dimensional (3D) silicon (Si) nanostructures have attracted much attention in solar cells due to their excellent broadband and omnidirectional light-harvesting properties. However, the development of 3D Si nanostructures is still plagued by the trade-off between structural complexity and fabri...
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Published in | Nanoscale advances Vol. 5; no. 1; pp. 142 - 152 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
England
RSC
20.12.2022
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Subjects | |
Online Access | Get full text |
ISSN | 2516-0230 2516-0230 |
DOI | 10.1039/D2NA00637E |
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Summary: | Three-dimensional (3D) silicon (Si) nanostructures have attracted much attention in solar cells due to their excellent broadband and omnidirectional light-harvesting properties. However, the development of 3D Si nanostructures is still plagued by the trade-off between structural complexity and fabrication difficulty. Herein, we proposed a facile and stable approach toward the fabrication of wafer-scale, ultra-black crystalline silicon (c-Si) with nano/micro hybrid structures. The distinguishing advantage of this approach is that it allows the formation of 3D Si nano/micro hybrid structures in a single-round process, avoiding the need for multiple iterations of lithography, coating, and etching required in conventional processes. The nano/micro hybrid structure arrays we fabricated show a low reflectance of <1% in the 600–1000 nm wavelength range and absorb 98.82% of incident light in the visible and near-infrared regions from 400 to 1100 nm under AM 1.5 G illumination. Solar cells made from nano/micro hybrid 3D structure arrays have an efficiency improvement of about 11.4% compared to those made from mono-micropillar arrays, and they have potential applications in high-performance photovoltaic devices. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 2516-0230 2516-0230 |
DOI: | 10.1039/D2NA00637E |