Azimuthal reflection high-energy electron diffraction study of MnAs growth on GaAs(001) by molecular beam epitaxy
Azimuthal reflection high-energy electron diffraction (ARHEED) and in situ grazing incidence synchrotron x-ray diffraction techniques are employed to investigate the growth, epitaxial orientation, and interfacial structure of MnAs layers grown on GaAs(001) by molecular beam epitaxy (MBE). We demonst...
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Published in | Journal of applied physics Vol. 110; no. 2; pp. 023505 - 023505-8 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
United States
American Institute of Physics
15.07.2011
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Subjects | |
Online Access | Get full text |
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Summary: | Azimuthal reflection high-energy electron diffraction (ARHEED) and
in situ
grazing incidence synchrotron x-ray diffraction techniques are employed to investigate the growth, epitaxial orientation, and interfacial structure of MnAs layers grown on GaAs(001) by molecular beam epitaxy (MBE). We demonstrate the power and reliability of ARHEED scans as a routine tool in characterizing the formation of epitaxial films. The ARHEED scans clearly reveal the formation of the rectangular MnAs unit cell during growth on GaAs(001) for a MnAs layer thickness of 2.1±0.2 monolayers with a tensile strain along the
MnAs
[
11
2
−
0
]
direction. A periodic coincidence site lattice, which is known to form along the MnAs[0001] direction to release the strain due to the huge lattice mismatch (∼30%) also produces periodic satellites of the diffraction spots in the ARHEED scan. The formation of different epitaxial orientations of MnAs during MBE growth can be directly observed using ARHEED scans. ARHEED is demonstrated to have a resolution similar to synchrotron x-ray diffraction with a double crystal monochromator, yielding full width at half maximum values of reflections as small as 0.005 reciprocal lattice units. |
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ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.3606469 |