An ultrathin wide-band planar metamaterial absorber based on a fractal frequency selective surface and resistive film

We propose an ultrathin wide-band metamaterial absorber (MA) based on a Minkowski (MIK) fractal frequency selective surface and resistive film. This absorber consists of a periodic arrangement of dielectric substrates sandwiched with an MIK fractal loop structure electric resonator and a resistive f...

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Published inChinese physics B Vol. 22; no. 6; pp. 570 - 575
Main Author 范跃农 程用志 聂彦 王鲜 龚荣洲
Format Journal Article
LanguageEnglish
Published 01.06.2013
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ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/22/6/067801

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Summary:We propose an ultrathin wide-band metamaterial absorber (MA) based on a Minkowski (MIK) fractal frequency selective surface and resistive film. This absorber consists of a periodic arrangement of dielectric substrates sandwiched with an MIK fractal loop structure electric resonator and a resistive film. The finite element method is used to simulate and analyze the absorption of the MA. Compared with the MA-backed copper film, the designed MA-backed resistive film exhibits an absorption of 90% at a frequency region of 2 GHz-20 GHz. The power loss density distribution of the MA is further illustrated to explain the mechanism of the proposed MA. Simulated absorptions at different incidence cases indicate that this absorber is polarization-insensitive and wide-angled. Finally, further simulated results indicate that the surface resistance of the resistive film and the dielectric constant of the substrate can affect the absorbing property of the MA. This absorber may be used in many military fields.
Bibliography:wide-band, metamaterial absorber, fractal frequency selective surface, resistive films
11-5639/O4
We propose an ultrathin wide-band metamaterial absorber (MA) based on a Minkowski (MIK) fractal frequency selective surface and resistive film. This absorber consists of a periodic arrangement of dielectric substrates sandwiched with an MIK fractal loop structure electric resonator and a resistive film. The finite element method is used to simulate and analyze the absorption of the MA. Compared with the MA-backed copper film, the designed MA-backed resistive film exhibits an absorption of 90% at a frequency region of 2 GHz-20 GHz. The power loss density distribution of the MA is further illustrated to explain the mechanism of the proposed MA. Simulated absorptions at different incidence cases indicate that this absorber is polarization-insensitive and wide-angled. Finally, further simulated results indicate that the surface resistance of the resistive film and the dielectric constant of the substrate can affect the absorbing property of the MA. This absorber may be used in many military fields.
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ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/22/6/067801