The impact of polishing on germanium-on-insulator substrates

We prepared germanium-on-insulator（GOI） substrates by using Smart-CutTM and wafer bonding technology. The fabricated GOI is appropriate for polishing due to a strong bonding strength（2.4 MPa） and a sufficient bonding quality.We investigated mechanical polishing and chemical-mechanical polishing（CMP）...

Full description

Saved in:
Bibliographic Details
Published inJournal of semiconductors Vol. 34; no. 8; pp. 38 - 42
Main Author 林旺 阮育娇 陈松岩 李成 赖虹凯 黄巍
Format Journal Article
LanguageEnglish
Published 01.08.2013
Subjects
Bonding
Bonding strength
Chemical-mechanical polishing
Crystals
Germanium
Mechanical polishing
Polishing
Semiconductors
X射线衍射
化学机械抛光
基板
研磨方法
粘接强度
绝缘体
锗
键合技术
Online AccessGet full text
ISSN1674-4926
DOI10.1088/1674-4926/34/8/083005

Cover

More Information
Summary:We prepared germanium-on-insulator（GOI） substrates by using Smart-CutTM and wafer bonding technology. The fabricated GOI is appropriate for polishing due to a strong bonding strength（2.4 MPa） and a sufficient bonding quality.We investigated mechanical polishing and chemical-mechanical polishing（CMP） systematically, and an appropriate polishing method—mechanical polishing combined with CMP-is obtained.As shown by AFM measurement,the RMS of GOI after polishing decreased to 0.543 nm.And the Ge peak profile of the XRD curve became symmetric,and the FWHM is about 121.7 arcsec,demonstrating a good crystal quality.
Bibliography:Lin Wang, Ruan Yujiao Chen Songyan, Li Cheng Lai Hongkai and Huang Wei Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, China
We prepared germanium-on-insulator（GOI） substrates by using Smart-CutTM and wafer bonding technology. The fabricated GOI is appropriate for polishing due to a strong bonding strength（2.4 MPa） and a sufficient bonding quality.We investigated mechanical polishing and chemical-mechanical polishing（CMP） systematically, and an appropriate polishing method—mechanical polishing combined with CMP-is obtained.As shown by AFM measurement,the RMS of GOI after polishing decreased to 0.543 nm.And the Ge peak profile of the XRD curve became symmetric,and the FWHM is about 121.7 arcsec,demonstrating a good crystal quality.
germanium-on-insulator wafer bonding mechanical polishing chemical-mechanical polishing
11-5781/TN
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-4926
DOI:10.1088/1674-4926/34/8/083005