Analysis of Misorientation of Single-Crystal Blocks in the Bulk InSb Crystal

A model for calculation of the angle of misorientation between the reflecting crystallographic planes and the plane of the semiconductor surface of a sample by means of high-resolution X-ray diffractometry has been developed. The model can minimize mechanical instrument errors, including the positio...

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Bibliographic Details
Published inJournal of communications technology & electronics Vol. 63; no. 3; pp. 309 - 313
Main Authors Shabrin, A. D., Goncharov, A. E., Pashkeev, D. A., Lyalikov, A. V., Egorov, A. V.
Format Journal Article
LanguageEnglish
Published Moscow Pleiades Publishing 01.03.2018
Springer
Springer Nature B.V
Subjects
Aircraft
Analysis
Articles from the Russian Journal Prikladnaya Fizika
Chemical-mechanical polishing
Communications Engineering
Crystal growth
Crystal structure
Crystallography
Czochralski method
Engineering
Incident radiation
Indium
Indium antimonide
Instrument errors
Mathematical models
Misalignment
Model testing
Networks
Parameters
Positioning devices (machinery)
Semiconductors (Materials)
Single crystals
indium antimonide
misorientation
X-ray diffractometry
InSb
blocks
single crystal
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Summary:A model for calculation of the angle of misorientation between the reflecting crystallographic planes and the plane of the semiconductor surface of a sample by means of high-resolution X-ray diffractometry has been developed. The model can minimize mechanical instrument errors, including the positioning and moving inaccuracies, and determine the optimum parameters of sample position with respect to the incident radiation for correct investigations of the perfection of the crystal structure. The principle of conduction of the experiment and the mathematical model used for processing of the obtained data are described. To find macrodefects of the crystal structure, in particular, blocks, the map of the distribution of parameters of the the rocking curve of the entire sample was obtained using the developed model. This allowed determination of the blocks boundaries and their mutual orientation in the directions longitudinal relative to the wafer. The model was tested on a wafer cut from a bulk indium antimonide single crystal grown by the Czochralski method and subjected to chemical-dynamic and chemical-mechanical polishing.
ISSN:1064-2269
1555-6557
DOI:10.1134/S106422691803018X