Design study of the gate-all-around silicon nanosheet MOSFETs

• Published in: Semiconductor science and technology Vol. 35; no. 3; pp. 3 - 7
• Main Authors: Lee, Yongwoo, Park, Geon-Hwi, Choi, Bongsik, Yoon, Jinsu, Kim, Hyo-Jin, Kim, Dae Hwan, Kim, Dong Myong, Kang, Min-Ho, Choi, Sung-Jin
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.03.2020
• Subjects: effective width; gate all around; MOSFET; short-channel effects; silicon nanosheet

The gate-all-around (GAA) silicon nanosheet (SiNS) metal-oxide-semiconductor field-effect transistor (MOSFET) structures have been recognized as excellent candidates to achieve improved power performance and area scaling compared to the current FinFET technologies. Specifically, SiNS structures prov...