Design study of the gate-all-around silicon nanosheet MOSFETs

The gate-all-around (GAA) silicon nanosheet (SiNS) metal-oxide-semiconductor field-effect transistor (MOSFET) structures have been recognized as excellent candidates to achieve improved power performance and area scaling compared to the current FinFET technologies. Specifically, SiNS structures prov...

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Bibliographic Details
Published inSemiconductor science and technology Vol. 35; no. 3; pp. 3 - 7
Main Authors Lee, Yongwoo, Park, Geon-Hwi, Choi, Bongsik, Yoon, Jinsu, Kim, Hyo-Jin, Kim, Dae Hwan, Kim, Dong Myong, Kang, Min-Ho, Choi, Sung-Jin
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.03.2020
Subjects
effective width
gate all around
MOSFET
short-channel effects
silicon nanosheet
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Summary:The gate-all-around (GAA) silicon nanosheet (SiNS) metal-oxide-semiconductor field-effect transistor (MOSFET) structures have been recognized as excellent candidates to achieve improved power performance and area scaling compared to the current FinFET technologies. Specifically, SiNS structures provide high drive currents due to wide effective channel width (Weff) while maintaining short-channel control. In this paper, we fabricate a GAA SiNS MOSFET fully surrounded by a gate with a gate length (LG) of 22 nm, a SiNS width (WNS) of 23 nm, and SiNS thickness (TNS) of 6 nm. In addition, the fabricated GAA SiNS MOSFETs were evaluated for electrostatic characteristics and short-channel effects (SCEs) according to various channel length and width dimensions. We confirmed that the GAA SiNS MOSFET showed similar short-channel controllability regardless of WNS due to the extremely thin TNS. In addition, we analyzed SCEs of GAA SiNS MOSFETs with different TNS through simulation.
Bibliography:SST-105835.R3
ISSN:0268-1242
1361-6641
DOI:10.1088/1361-6641/ab6bab