Effects of sidewall MOS channel on performance of AlGaN/GaN FinFET

AlGaN/GaN FinFETs with various fin widths (W sub(fin)), which have both a 2DEG channel and two sidewall MOS channels, have been fabricated by using electron-beam lithography and subsequent sidewall wet etch in tetramethyl ammonium hydroxide (TMAH) solution. The devices with wide W sub(fin) of 150 nm...

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Bibliographic Details
Published inMicroelectronic engineering Vol. 147; pp. 155 - 158
Main Authors Son, Dong-Hyeok, Jo, Young-Woo, Sindhuri, V., Im, Ki-Sik, Seo, Jae Hwa, Kim, Yong Tae, Kang, In Man, Cristoloveanu, Sorin, Bawedin, Maryline, Lee, Jung-Hee
Format Journal Article
LanguageEnglish
Published Elsevier 01.11.2015
Subjects
Aluminum gallium nitrides
Ammonium hydroxide
Channels
Devices
Electron beam lithography
Engineering Sciences
Etching
Micro and nanotechnologies
Microelectronics
Trapping
TMAH solution
Fin width
Trapping/detrapping
2DEG
FinFET
AlGaN/GaN
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Summary:AlGaN/GaN FinFETs with various fin widths (W sub(fin)), which have both a 2DEG channel and two sidewall MOS channels, have been fabricated by using electron-beam lithography and subsequent sidewall wet etch in tetramethyl ammonium hydroxide (TMAH) solution. The devices with wide W sub(fin) of 150 nm showed normally-on operation with threshold voltage (V sub(th)) of -2.5 and -5.0 V, respectively. The devices also exhibited broad transconductance (g sub(m)), and excellent off-state performance with very low subthreshold swing (SS). On the other hand, narrow device with W sub(fin) of 50 nm exhibited normally-off operation with V sub(th) of 3.0 V, but degraded SS due to trapping effect at the sidewall of fin.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2015.04.101