Interpenetrating Self‐Supporting Networks from Anisotropic Semiconductor Nanoparticles and Noble Metal Nanowires

• Published in: Small structures Vol. 4; no. 12
• Main Authors: Rosebrock, Marina, Schlenkrich, Jakob, Christmann, Hannah, Graf, Rebecca, Bessel, Patrick, Dorfs, Dirk, Zámbó, Dániel, Bigall, Nadja C.
• Format: Journal Article
• Language: English
• Published: Weinheim John Wiley & Sons, Inc 01.12.2023; Wiley-VCH
• Subjects: Cadmium selenides; Electrochemical analysis; Electrodes; Electron microscopes; Gold; Interpenetrating networks; interpenetration; Investigations; ionic gelation; Ligands; mixing; multicomponent; Nanomaterials; Nanoparticles; Nanorods; Nanostructure; Nanowires; Network formation; Noble metals; Photoelectric effect; Photoelectric emission; Scanning electron microscopy; Semiconductors
• ISSN: 2688-4062; 2688-4062
• DOI: 10.1002/sstr.202300225

In this work, a new type of multicomponent nanostructures is introduced by forming interpenetrating networks of two different nanomaterials. In detail, gel networks from semiconductor nanorods are interpenetrated by Au nanowires. Two different types of gelling agents, namely S2− and Yb3+, are employed to trigger the network formation. The structural and electrochemical properties of the resulting materials are discussed. (Photo)electrochemical measurements are performed on the structures to compare the materials in terms of their conductivity as well as their efficiency in converting photonic energy to electrical energy. The new type of CdSe/CdS:Au nanostructure gelled with S2− shows one order of magnitude higher photocurrent than the system gelled with Yb3+. Moreover, the introduction of Au nanowires exhibit a photocurrent which is two orders of magnitudes higher than in samples without Au nanowires. Mixed nanoparticle networks are very exciting materials in terms of their properties. The semiconductor–metal network shown here stands out structurally among the mixed networks. Both structures are completely interpenetrated. The photoelectrochemical properties are promising. The bonding between semiconductor and metal can be significantly improved by the choice of gelling agent.