Nanosecond recombination lifetimes and spin relaxation times in (110) InGaAs/AlGaAs quantum wells at room temperature

Abstract Quantum wells in InGaAs/AlGaAs with (110) orientation are attractive as active layers in spin-controlled lasers with circularly polarized emission, while the spin relaxation time is expected to be larger than for (100)-oriented layers. However, the hitherto reported recombination lifetimes...

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Bibliographic Details
Published inApplied physics express Vol. 17; no. 3; pp. 33002 - 33006
Main Authors Iba, Satoshi, Ohno, Yuzo
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.03.2024
Subjects
molecular beam epitaxy
Quantum well
recombination lifetime
spin relaxation time
spin-controlled laser
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Summary:Abstract Quantum wells in InGaAs/AlGaAs with (110) orientation are attractive as active layers in spin-controlled lasers with circularly polarized emission, while the spin relaxation time is expected to be larger than for (100)-oriented layers. However, the hitherto reported recombination lifetimes (40 ps) and spin relaxation times (440 ps) of (110) InGaAs/AlGaAs structures are insufficient. Here it is shown that higher growth temperatures and higher V/III beam equivalent pressure ratios than previously used in crystal growth by molecular beam epitaxy lead to recombination and spin relaxation times in the nanosecond range at RT, meeting the requirements for application in spin lasers.
Bibliography:APEX-107798.R1
ISSN:1882-0778
1882-0786
DOI:10.35848/1882-0786/ad2907