High external quantum efficiency in InGaN-based green micro-light emitting diodes at ultra-low current density by removing pre-wells

InGaN-based green light-emitting diodes with different pre-well numbers were grown by an organometallic vapor phase epitaxy deposition method on patterned sapphire substrates. Micro-LED chips with a size of 17 × 20 μm 2 were fabricated, and a peak external quantum efficiency (EQE) of 39% was achieve...

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Bibliographic Details
Published inApplied physics express Vol. 18; no. 1; pp. 11001 - 11005
Main Authors Wang, Aimin, Chen, Kaixuan, Kang, Junyong
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.01.2025
Subjects
external quantum efficiency
InGaN
micro-LED
prewells
V-pits
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ISSN1882-0778
1882-0786
DOI10.35848/1882-0786/ada689

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Summary:InGaN-based green light-emitting diodes with different pre-well numbers were grown by an organometallic vapor phase epitaxy deposition method on patterned sapphire substrates. Micro-LED chips with a size of 17 × 20 μm 2 were fabricated, and a peak external quantum efficiency (EQE) of 39% was achieved at ultra-low current density of 0.07 A cm −2 . The EQE variation curves of different samples were studied under different current densities. It was confirmed that by reducing the number of pre-wells the Shockley–Read–Hall non-radiative recombination under ultra-low current density was suppressed, which ultimately results in a high EQE of micro-LEDs.
Bibliography:APEX-108262.R1
ISSN:1882-0778
1882-0786
DOI:10.35848/1882-0786/ada689