Control of Photovoltaic Systems for Enhanced Short-Term Voltage Stability and Recovery

This paper investigates the impact of: 1) the Low Voltage Ride-Through (LVRT) and Dynamic Voltage Support (DVS) capability; 2) the active current recovery rate; 3) the local voltage control; and 4) the plant-level voltage control of large-scale PhotoVoltaic (PV) systems on Short-Term (ST) voltage st...

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Published inIEEE transactions on energy conversion Vol. 34; no. 1; pp. 243 - 254
Main Authors Lammert, Gustav, Premm, Daniel, Ospina, Luis David Pabon, Boemer, Jens C., Braun, Martin, Van Cutsem, Thierry
Format Journal Article Web Resource
LanguageEnglish
Published New York IEEE 01.03.2019
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Institute of Electrical and Electronics Engineers
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Summary:This paper investigates the impact of: 1) the Low Voltage Ride-Through (LVRT) and Dynamic Voltage Support (DVS) capability; 2) the active current recovery rate; 3) the local voltage control; and 4) the plant-level voltage control of large-scale PhotoVoltaic (PV) systems on Short-Term (ST) voltage stability and Fault-Induced Delayed Voltage Recovery (FIDVR). Moreover, the influence on transient and frequency stability is studied briefly. To evaluate FIDVR, a novel metric, the so-called Voltage Recovery Index (VRI), is defined. The studies are performed with the WECC generic PV system model on an IEEE voltage stability test system, namely the Nordic test system. The results show that without LVRT capability the system is ST voltage and transient unstable. Only the LVRT and DVS capability help to avoid ST voltage and transient instability. Considering voltage and frequency dynamics, an active current recovery rate of 100%/s shows the best performance. To further enhance voltage dynamics, plant-level voltage control together with local coordinated reactive power/voltage control should be applied. Moreover, the VRI provides useful information about the FIDVR and helps to compare different ST voltage controls.
Bibliography:ObjectType-Article-1
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content type line 14
scopus-id:2-s2.0-85054618910
ISSN:0885-8969
1558-0059
DOI:10.1109/TEC.2018.2875303