Low-Voltage Tunnel Transistors for Beyond CMOS Logic

Steep subthreshold swing transistors based on interband tunneling are examined toward extending the performance of electronics systems. In particular, this review introduces and summarizes progress in the development of the tunnel field-effect transistors (TFETs) including its origin, current experi...

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Bibliographic Details
Published inProceedings of the IEEE Vol. 98; no. 12; pp. 2095 - 2110
Main Authors Seabaugh, Alan C., Zhang, Qin
Format Journal Article
LanguageEnglish
Published New York IEEE 01.12.2010
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
CMOS
CMOS integrated circuits
Electric potential
Electronic systems
Junctions
Logic gates
MOSFET circuits
MOSFETs
Semiconductor devices
Subthreshold current
Subthreshold swing
Transistors
Tunneling
tunneling transistor
Tunnels (transportation)
Voltage
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Summary:Steep subthreshold swing transistors based on interband tunneling are examined toward extending the performance of electronics systems. In particular, this review introduces and summarizes progress in the development of the tunnel field-effect transistors (TFETs) including its origin, current experimental and theoretical performance relative to the metal-oxide-semiconductor field-effect transistor (MOSFET), basic current-transport theory, design tradeoffs, and fundamental challenges. The promise of the TFET is in its ability to provide higher drive current than the MOSFET as supply voltages approach 0.1 V.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
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ISSN:0018-9219
1558-2256
DOI:10.1109/JPROC.2010.2070470