Pulse Laser Sulfur-Hyperdoping of Germanium and High Quantum Efficiency Photodiodes

Germanium was successfully hyperdoped with sulfur by means of nanosecond pulse laser and SF6 gas. A photodiode was fabricated based on sulfur-hyperdoped germanium. Rectifying current-voltage characteristics were observed for the device. The sulfur-hyperdoped germanium photodiode showed an internal q...

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Bibliographic Details
Published inIEEE photonics journal Vol. 8; no. 5; pp. 1 - 10
Main Authors Keye Sun, Gupta, Mool C.
Format Journal Article
LanguageEnglish
Published IEEE 01.10.2016
Subjects
Atomic beams
Conductivity
Doping
Germanium
laser hyperdoping
photodiode
Photodiodes
Schottky diodes
Silicon
sulfur
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Summary:Germanium was successfully hyperdoped with sulfur by means of nanosecond pulse laser and SF6 gas. A photodiode was fabricated based on sulfur-hyperdoped germanium. Rectifying current-voltage characteristics were observed for the device. The sulfur-hyperdoped germanium photodiode showed an internal quantum efficiency close to 150% from visible to near infrared and increased to 275% for the ultraviolet region. The -3 dB bandwidth was measured to be 20 MHz. Sulfur was demonstrated to be an effective deep level dopant for realizing high-performance germanium photodiodes.
ISSN:1943-0655
1943-0655
1943-0647
DOI:10.1109/JPHOT.2016.2611444