Fast annealing of II-VI compounds by pulsed laser irradiation

The effects of pulsed laser annealing of CdTe, containing small quantities of Zn or Hg, are described for single crystals and thin film samples. The influence of laser power, wavelength, number of applied pulses, and homogenization on the morphological changes and some physical parameters were inves...

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Bibliographic Details
Published inJournal of physics. D, Applied physics Vol. 27; no. 2; pp. 407 - 413
Main Authors Neumann-Spallart, M, Levy-Clement, C, Grabner, G
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 14.02.1994
Institute of Physics
Subjects
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science; rheology
Exact sciences and technology
Materials science
Physical radiation effects, radiation damage
Physics
Structure of solids and liquids; crystallography
Surface treatments
Ultraviolet, visible, and infrared radiation effects (including laser radiation)
Annealing
Inorganic compounds
Melting
Semiconductor materials
Physical radiation effects
Transition element compounds
Surfaces
Binary compounds
Experimental study
Pulsed lasers
Thin films
Cracks
Monocrystals
Laser radiation
Cadmium tellurides
Morphology
Electrochemistry
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Summary:The effects of pulsed laser annealing of CdTe, containing small quantities of Zn or Hg, are described for single crystals and thin film samples. The influence of laser power, wavelength, number of applied pulses, and homogenization on the morphological changes and some physical parameters were investigated by scanning electron microscopy, x-ray diffraction, uv absorption spectrophotometry and (photo)electrochemical characterization. (Original abstract-amended)
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0022-3727
1361-6463
DOI:10.1088/0022-3727/27/2/035