Inductively Coupled Plasma Reactive Ion Etching of GeSbTe Thin Films in a HBr/Ar Gas
Inductively coupled plasma reactive ion etching of GeSbTe (GST) thin films with a photoresist mask was performed using a HBr/Ar gas mixture. The etch rate of GST films increased up to 20% HBr concentration and began to decrease with further increase of HBr concentration. The etch profiles were impro...
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Published in | Integrated ferroelectrics Vol. 90; no. 1; pp. 95 - 106 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
Taylor & Francis Group
19.04.2007
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Subjects | |
Online Access | Get full text |
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Summary: | Inductively coupled plasma reactive ion etching of GeSbTe (GST) thin films with a photoresist mask was performed using a HBr/Ar gas mixture. The etch rate of GST films increased up to 20% HBr concentration and began to decrease with further increase of HBr concentration. The etch profiles were improved with increasing HBr gas concentration. In particular, clean and vertical etch profiles were achieved at 80∼ 100% HBr gas concentrations. As the coil rf power and dc-bias voltage increased, the etch rates increased. The gas pressure had little influence on the etch rate. The good etch profiles were obtained at high coil power, low dc-bias and high gas pressure. The x-ray photoelectron spectroscopy analysis reveals that Te showed highest reactivity with HBr gas chemistry. A high degree of anisotropic etching of GST films was achieved using HBr/Ar gas mixture at the optimized etch conditions. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 1058-4587 1607-8489 |
DOI: | 10.1080/10584580701249371 |