Black silicon – correlation between microstructure and Raman scattering

• Published in: Journal of Electrical Engineering Vol. 70; no. 7; pp. 58 - 64
• Main Authors: Jurečka, Stanislav, Pinčík, Emil, Imamura, Kentaro, Matsumoto, Taketoshi, Kobayashi, Hikaru
• Format: Journal Article
• Language: English
• Published: Bratislava Sciendo 01.12.2019; De Gruyter Poland
• Subjects: Axial stress; black silicon; Correlation analysis; Etching; fractal properties; Microstructure; Optical properties; Organic chemistry; Raman scattering; Raman spectra; roughness; Silicon substrates; Surface roughness; Surface structure; TEM; Tensile stress

Black silicon layers were formed on silicon substrate by the surface structure chemical transfer method and by anodic etching method. Properties of microstructure of formed layers were experimentally studied by the electron microscopy methods (TEM) and characterized by statistical, Fourier and multi...