Black silicon – correlation between microstructure and Raman scattering

• Published in: Journal of Electrical Engineering Vol. 70; no. 7; pp. 58 - 64
• Main Authors: Jurečka, Stanislav, Pinčík, Emil, Imamura, Kentaro, Matsumoto, Taketoshi, Kobayashi, Hikaru
• Format: Journal Article
• Language: English
• Published: Bratislava Sciendo 01.12.2019; De Gruyter Poland
• Subjects: Axial stress; black silicon; Correlation analysis; Etching; fractal properties; Microstructure; Optical properties; Organic chemistry; Raman scattering; Raman spectra; roughness; Silicon substrates; Surface roughness; Surface structure; TEM; Tensile stress
• ISSN: 1339-309X; 1335-3632; 1339-309X
• DOI: 10.2478/jee-2019-0042

Black silicon layers were formed on silicon substrate by the surface structure chemical transfer method and by anodic etching method. Properties of microstructure of formed layers were experimentally studied by the electron microscopy methods (TEM) and characterized by statistical, Fourier and multifractal methods. Theoretical structures with defined fractal properties and surface roughness were generated and their microstructure properties were evaluated. Obtained results were used for the explanation of the real structure development during the forming procedure. By using of this approach, we study the correlation of roughness and fractality with optical properties. Black silicon layers were also investigated by using of Raman scattering method. Optimized theoretical model describing the 1 order of black Si Raman scattering profile was constructed and used for evaluation of the biaxial tensile stress introduced during etching procedure.