Black silicon – correlation between microstructure and Raman scattering

Black silicon layers were formed on silicon substrate by the surface structure chemical transfer method and by anodic etching method. Properties of microstructure of formed layers were experimentally studied by the electron microscopy methods (TEM) and characterized by statistical, Fourier and multi...

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Published inJournal of Electrical Engineering Vol. 70; no. 7; pp. 58 - 64
Main Authors Jurečka, Stanislav, Pinčík, Emil, Imamura, Kentaro, Matsumoto, Taketoshi, Kobayashi, Hikaru
Format Journal Article
LanguageEnglish
Published Bratislava Sciendo 01.12.2019
De Gruyter Poland
Subjects
Axial stress
black silicon
Correlation analysis
Etching
fractal properties
Microstructure
Optical properties
Organic chemistry
Raman scattering
Raman spectra
roughness
Silicon substrates
Surface roughness
Surface structure
TEM
Tensile stress
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Abstract Black silicon layers were formed on silicon substrate by the surface structure chemical transfer method and by anodic etching method. Properties of microstructure of formed layers were experimentally studied by the electron microscopy methods (TEM) and characterized by statistical, Fourier and multifractal methods. Theoretical structures with defined fractal properties and surface roughness were generated and their microstructure properties were evaluated. Obtained results were used for the explanation of the real structure development during the forming procedure. By using of this approach, we study the correlation of roughness and fractality with optical properties. Black silicon layers were also investigated by using of Raman scattering method. Optimized theoretical model describing the 1 order of black Si Raman scattering profile was constructed and used for evaluation of the biaxial tensile stress introduced during etching procedure.
AbstractList Black silicon layers were formed on silicon substrate by the surface structure chemical transfer method and by anodic etching method. Properties of microstructure of formed layers were experimentally studied by the electron microscopy methods (TEM) and characterized by statistical, Fourier and multifractal methods. Theoretical structures with defined fractal properties and surface roughness were generated and their microstructure properties were evaluated. Obtained results were used for the explanation of the real structure development during the forming procedure. By using of this approach, we study the correlation of roughness and fractality with optical properties. Black silicon layers were also investigated by using of Raman scattering method. Optimized theoretical model describing the 1st order of black Si Raman scattering profile was constructed and used for evaluation of the biaxial tensile stress introduced during etching procedure.
Black silicon layers were formed on silicon substrate by the surface structure chemical transfer method and by anodic etching method. Properties of microstructure of formed layers were experimentally studied by the electron microscopy methods (TEM) and characterized by statistical, Fourier and multifractal methods. Theoretical structures with defined fractal properties and surface roughness were generated and their microstructure properties were evaluated. Obtained results were used for the explanation of the real structure development during the forming procedure. By using of this approach, we study the correlation of roughness and fractality with optical properties. Black silicon layers were also investigated by using of Raman scattering method. Optimized theoretical model describing the 1 order of black Si Raman scattering profile was constructed and used for evaluation of the biaxial tensile stress introduced during etching procedure.
Black silicon layers were formed on silicon substrate by the surface structure chemical transfer method and by anodic etching method. Properties of microstructure of formed layers were experimentally studied by the electron microscopy methods (TEM) and characterized by statistical, Fourier and multifractal methods. Theoretical structures with defined fractal properties and surface roughness were generated and their microstructure properties were evaluated. Obtained results were used for the explanation of the real structure development during the forming procedure. By using of this approach, we study the correlation of roughness and fractality with optical properties. Black silicon layers were also investigated by using of Raman scattering method. Optimized theoretical model describing the 1 st order of black Si Raman scattering profile was constructed and used for evaluation of the biaxial tensile stress introduced during etching procedure.
Author Jurečka, Stanislav
Kobayashi, Hikaru
Imamura, Kentaro
Matsumoto, Taketoshi
Pinčík, Emil
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Snippet Black silicon layers were formed on silicon substrate by the surface structure chemical transfer method and by anodic etching method. Properties of...
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SubjectTerms Axial stress
black silicon
Correlation analysis
Etching
fractal properties
Microstructure
Optical properties
Organic chemistry
Raman scattering
Raman spectra
roughness
Silicon substrates
Surface roughness
Surface structure
TEM
Tensile stress
Title Black silicon – correlation between microstructure and Raman scattering
URI https://www.degruyter.com/doi/10.2478/jee-2019-0042
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