Correlations between ESR and photoluminescence in slightly hydrogenated silicon nitride
The electronic properties of slightly hydrogenated silicon nitride have been studied by electron spin resonance and photoluminescence. It is shown that the detection of the nitrogen dangling bond, after thermal annealing followed by ultraviolet irradiation, critically depends on the composition. Cor...
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Published in | Journal of physics. D, Applied physics Vol. 28; no. 3; pp. 565 - 570 |
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Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
Bristol
IOP Publishing
14.03.1995
Institute of Physics |
Subjects | |
Online Access | Get full text |
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Summary: | The electronic properties of slightly hydrogenated silicon nitride have been studied by electron spin resonance and photoluminescence. It is shown that the detection of the nitrogen dangling bond, after thermal annealing followed by ultraviolet irradiation, critically depends on the composition. Correlations are established between the appearance of the dangling bond and the photoluminescence efficiency, suggesting that an electronic state associated with a nitrogen dangling bond could be a radiative centre. (Original abstract-amended) |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0022-3727 1361-6463 |
DOI: | 10.1088/0022-3727/28/3/018 |