Correlations between ESR and photoluminescence in slightly hydrogenated silicon nitride

• Published in: Journal of physics. D, Applied physics Vol. 28; no. 3; pp. 565 - 570
• Main Authors: Savall, C, Bruyere, J C, Krautwurm, J
• Format: Journal Article
• Language: English
• Published: Bristol IOP Publishing 14.03.1995; Institute of Physics
• Subjects: Color centers and other defects; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electron paramagnetic resonance and relaxation; Electron states; Exact sciences and technology; Impurity and defect levels; Magnetic resonances and relaxations in condensed matter, mössbauer effect; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Other nonmetals; Other solid inorganic materials; Photoluminescence; Physics; Annealing; Inorganic compounds; ESR; Photoluminescence; Amorphous state; Experimental study; Defects; Thin films; Dangling bonds; Ultraviolet radiation; Hydrogen additions; Illumination; Silicon nitrides
• ISSN: 0022-3727; 1361-6463
• DOI: 10.1088/0022-3727/28/3/018

The electronic properties of slightly hydrogenated silicon nitride have been studied by electron spin resonance and photoluminescence. It is shown that the detection of the nitrogen dangling bond, after thermal annealing followed by ultraviolet irradiation, critically depends on the composition. Correlations are established between the appearance of the dangling bond and the photoluminescence efficiency, suggesting that an electronic state associated with a nitrogen dangling bond could be a radiative centre. (Original abstract-amended)