Characterization of Nickel-Silicide Dependence on the Substrate Dopants for Nanoscale Complementary Metal Oxide Semiconductor Technology
Saved in:
Published in | Japanese Journal of Applied Physics Vol. 43; no. 1; pp. 91 - 95 |
---|---|
Main Authors | , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
01.01.2004
|
Online Access | Get full text |
Cover
Loading…
ISSN: | 0021-4922 1347-4065 |
---|---|
DOI: | 10.1143/JJAP.43.91 |