Selectively-grown InGaP/GaAs on silicon heterostructures for application to photovoltaic–photoelectrolysis cells

• Published in: Journal of crystal growth Vol. 225; no. 2-4; pp. 359 - 365
• Main Authors: Mauk, Michael G., Tata, Anthony N., Feyock, Bryan W.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.05.2001; Elsevier
• Subjects: A3. Chemical vapor deposition processes; A3. Liquid phase epitaxy; A3. Selective epitaxy; Applied sciences; B2. Semiconducting III–V materials; B3. Solar cells; Energy; Exact sciences and technology; Natural energy; Photovoltaic conversion; Solar cells. Photoelectrochemical cells; Solar energy; A3.Chemical vapor deposition processes; B3.Solar cells; 81.15 Lm; A3.Liquid phase epitaxy; A3.Selective epitaxy; B2.Semiconducting III–V materials; 84.60 Dn; 81.05 Ea; Ternary compound; Binary compound; Gallium arsenides; Semiconductor materials; Mask; Gallium phosphide; Chemical vapor deposition; Indium phosphide; Photovoltaic cell; Solar cell; Liquid phase epitaxy; Photoelectrochemical cell; Heterojunctions; Selective etching; Manufacturing; Photolithography; MESA technology
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(01)00870-3

Photovoltaic–photoelectrochemical (PV-PEC) cells based on InGaP/GaAs show excellent prospects for efficient production of hydrogen by electrolysis of water using solar energy. We describe a combined close-spaced vapor transport (CSVT)/liquid-phase epitaxy (LPE) process to produce arrays of selectively-grown mesas of InGaP/GaAs on silicon substrates. Unlike other semiconductor devices, the PV-PEC cell is well suited for such selectively-grown, discontinuous heteroepitaxial films. Thus, this device application affords exploiting the potential advantages of selective epitaxy, namely, the substantial reduction of stress and defects caused by thermal expansion and lattice mismatch between the silicon substrate and III–V epilayers.